CareerCross uses cookies to enhance your experience on our websites. If you continue to view our sites without changing your browser settings, then it is assumed that we have your consent to collect and utilise your cookies. If you do not want to give us your consent, then please change the cookie settings on your browser. Please refer to our privacy policy for more information.
CareerCross uses cookies to enhance your experience on our websites. If you continue to view our sites without changing your browser settings, then it is assumed that we have your consent to collect and utilise your cookies. If you do not want to give us your consent, then please change the cookie settings on your browser. Please refer to our privacy policy for more information.
【800～900万円】SiCエピタキシャル成長プロセス開発エンジニア [53044]
| Hiring Company | ルネサス エレクトロニクス株式会社 |
| Location | Ehime Prefecture |
| Job Type | Permanent Full-time |
| Salary | 8 million yen ~ 9 million yen |
Job Description
【求人No NJB2133826】
【担当技術】
SiCエピタキシャル成長プロセス開発エンジニア
【担当業務】
SiCエピタキシャル成長装置立ち上げ、プロセス条件出し、量産化
【担当職場】
自社前工程国内拠点
General Requirements
| Minimum Experience Level | No experience |
| Career Level | Mid Career |
| Minimum English Level | Business Level |
| Minimum Japanese Level | Native |
| Minimum Education Level | Bachelor's Degree |
| Visa Status | Permission to work in Japan required |
Required Skills
【MUST】
SiCエピタキシャル成長プロセス開発の従事経験が2年以上あること。
【WANT】
4年制大学または大学院にて工学、化学、物理学等を修了していること。
Job Location
- Ehime Prefecture
Work Conditions
| Job Type | Permanent Full-time |
| Salary | 8 million yen ~ 9 million yen |
| Work Hours | 08:30 ～ 17:15 |
| Holidays | 【有給休暇】初年度 23日 1か月目から 【休日】完全週休二日制 土 日 祝日 夏季休暇 年末年始 【有給休暇】入社月に付与（… |
| Industry | Electronics, Semiconductor |
Job Category
- Electronics and Semiconductor Technology > Production Engineering (Electronics and Semiconductor Technology)
