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Hiring Company | 東芝デバイス ストレージ株式会社 |
Location | Hyogo Prefecture |
Job Type | Permanent Full-time |
Salary | 4.5 million yen ~ 10 million yen |
【求人No NJB2116632】
【業務内容】
パワーデバイス(主にSiC)の製品開発・デバイス設計・プロセス・エピ技術・装置開発
■製品開発
・デバイス設計・シミュレーション(TCAD)
・試作・性能評価・解析
・量産立上業務
■プロセス開発
・SiCデバイスのプロセスインテグレーション
・SiCデバイスのユニットプロセス開発
・SiCのエピプロセス 装置開発
【参考リンク】
・スペシャルインタビュー~あなたのキャリアが世界を変える~
https://toshiba.semicon storage.com/jp/company/recruit/work/message_special.html
・パワー半導体技術広告
https://www.youtube.com/watch?v=11SWvEWe4lQ
Minimum Experience Level | No experience |
Career Level | Mid Career |
Minimum English Level | Daily Conversation |
Minimum Japanese Level | Native |
Minimum Education Level | Bachelor's Degree |
Visa Status | Permission to work in Japan required |
Job Type | Permanent Full-time |
Salary | 4.5 million yen ~ 10 million yen |
Work Hours | 08:30 ~ 17:15 |
Holidays | 【有給休暇】入社7ヶ月目には最低10日以上 ※初年度は入社月によって変動。半日取得可、最大24日付与、繰越制度あり。 【休日】… |
Industry | Electronics, Semiconductor |